Assessing the thermoelectric properties of CuxO (x = 1 to 2) thin films as a function of composition

Series of CuxO thin-films in the entire range of compositions 1≤x≤2 were obtained by varying the oxygen flux in an rf-sputter deposition process. Growth windows for three crystalline phases, i.e., the thermodynamically stable cuprous oxide Cu2O and cupric oxide CuO as well as the metastable paramelaconite Cu4O3, were observed. The crystalline phases persist non-stoichiometrically over a wide range of compositions. These flux-range windows are separated by ranges where highly disordered, almost amorphous material is obtained. All samples were analysed with respect to their thermoelectric properties, i.e., Seebeck coefficient, electrical, and thermal conductivity. Clear trends of these transport parameters were found and used to determine the thermoelectric figure of merit ZT. The ZT-values at room temperature are highest for the two thermodynamically stable crystalline phases CuO and Cu2O.