High efficiency heterojunction solar cells on n-type kerfless mono crystalline silicon wafers by epitaxial growth

We present a heterojunction (HJ) solar cell on n-type epitaxially grown kerfless crystalline-silicon (c-Si) with a conversion efficiency of 22.5%. The total cell area is 243.4 cm2. The cell has a short-circuit current density of 38.6 mA/cm2, an open-circuit voltage of 735 mV, and a fill factor of 0....

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Veröffentlicht in:Applied physics letters 2015-06, Vol.106 (22)
Hauptverfasser: Kobayashi, Eiji, Watabe, Yoshimi, Hao, Ruiying, Ravi, T. S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present a heterojunction (HJ) solar cell on n-type epitaxially grown kerfless crystalline-silicon (c-Si) with a conversion efficiency of 22.5%. The total cell area is 243.4 cm2. The cell has a short-circuit current density of 38.6 mA/cm2, an open-circuit voltage of 735 mV, and a fill factor of 0.791. The key advantages and technological tasks of epitaxial wafers for HJ solar cells are discussed, in comparison with conventional n-type Czockralski c-Si wafers. The combination of HJ and kerfless technology can lead to high conversion efficiency with a potential at low cost.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4922196