Synthesis and characterization of SnO2 thin layer with a doping aluminum is deposited on quartz substrates

In this research, SnO2 and SnO2:Al thin films have been successfully deposited on quartz substrates. Starting from Tin (II) chloride dehydrate as precursor, ethanol as solvent, and AlCl3 as dopant substance. The film was deposited by spin coating method. Structural and morphological analysis was carried out by X-Ray Diffraction (XRD) measurement and Scanning Electron Microscope (SEM). Optical characteristics were analyzed from the study of transmission and absorption spectrum data obtained by UV-Vis Spectrophotometer. Aluminum was added by various concentrations (5%, 10%, and 15%). Transmissions of visible light were better on the low concentrations of Al, but absorptions were low too. The band gap energy was decreased by increasing the Al concentration. From XRD measurement, there were crystal system alterations. They were confirmed that SnO2 and SnO2 doped Al have cubic structure (by material phase classification of Al2O4Sn) because of the substrate compositions contained Al. In this study, XRD pattern indicates that grain size of thin film decreased just after the Al dopant was added. EDX analysis confirms the presence of SnO2 and Al in thin film material deposited on quartz substrate.