Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220–250 nm with reflectivity close to unity were produced using epitaxial Al x Ga1- x N/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the Al x Ga1- x N layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%–11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6–9 nm.