Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn4−xDyxN films

Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn4−xDyxN films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-pos...

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Veröffentlicht in:Journal of applied physics 2015-08, Vol.118 (5)
Hauptverfasser: Meng, M., Wu, S. X., Zhou, W. Q., Ren, L. Z., Wang, Y. J., Wang, G. L., Li, S. W.
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Sprache:eng
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Zusammenfassung:Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn4−xDyxN films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current JAH is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σAH, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4928085