Leakage current of germanium-on-insulator-based junctionless nanowire transistors

Junctionless nanowire transistors (JNTs) have been fabricated on ultra-thin-body germanium-on-insulator (GOI) substrates using a simple Si-compatible top-down process. These JNTs, which have gate lengths and widths that are both less than 100 nm, exhibit good electrical characteristics (Ion/Ioff rat...

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Veröffentlicht in:	Applied physics letters 2015-09, Vol.107 (13)
Hauptverfasser:	Sun, Chuanchuan, Liang, Renrong, Liu, Libin, Wang, Jing, Xu, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Leakage current Nanowires Semiconductor devices Silicon substrates Transistors
Online-Zugang:	Volltext
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