Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

The stability of metal-semiconductor field-effect-transistors (MESFETs) with silver oxide Schottky gates on In-Ga-Zn-O (IGZO) channels, grown by mist chemical-vapor-deposition, was examined under different combinations of positive and negative bias, illumination, and temperature stress. These device...

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Veröffentlicht in:Applied physics letters 2015-10, Vol.107 (14)
Hauptverfasser: Dang, Giang T., Kawaharamura, Toshiyuki, Furuta, Mamoru, Saxena, Saurabh, Allen, Martin W.
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Sprache:eng
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Zusammenfassung:The stability of metal-semiconductor field-effect-transistors (MESFETs) with silver oxide Schottky gates on In-Ga-Zn-O (IGZO) channels, grown by mist chemical-vapor-deposition, was examined under different combinations of positive and negative bias, illumination, and temperature stress. These devices were remarkably stable, even under the most severe condition of negative-bias-illumination-temperature-stress (NBITS), where the threshold voltage shift after 10 h NBITS was only +0.12 V and was mainly attributed to a decrease in the carrier density of the channel. The stability of these IGZO MESFETs is associated with the use of a conducting Schottky gate that significantly reduces charge trapping at the gate-channel interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4931960