Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

This paper reports initial the demonstration of prototype Ge1−x−ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1−x−ySixSny/p-Ge(Sn/Si)] using ultra low...

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Veröffentlicht in:Journal of applied physics 2015-10, Vol.118 (13)
Hauptverfasser: Gallagher, J D, Xu C, Senaratne, C L, Aoki, T, Wallace, P M, Kouvetakis, J, Menéndez, J
Format: Artikel
Sprache:eng
Schlagworte:
Current voltage characteristics
Dislocations
Electrical properties
Electroluminescence
Emission spectra
Germanium
Heterostructures
Light emitting diodes
Light sources
Optical properties
Organic chemistry
Organic light emitting diodes
Photonics
Silicon
Ternary alloys
Thermal stability
Tin
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Beschreibung
Zusammenfassung:This paper reports initial the demonstration of prototype Ge1−x−ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1−x−ySixSny/p-Ge(Sn/Si)] using ultra low-temperature (T 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4931770