Twist-controlled resonant tunnelling between monolayer and bilayer graphene

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electros...

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Veröffentlicht in:Applied physics letters 2015-11, Vol.107 (20)
Hauptverfasser: Lane, T. L. M., Wallbank, J. R., Fal'ko, V. I.
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration, we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates on either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4935988