Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors
Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta do...
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Veröffentlicht in: | Applied physics letters 2015-12, Vol.107 (23) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4937389 |