Semitransparent p-CuI and n-ZnO thin films prepared by low temperature solution growth for thermoelectric conversion of near-infrared solar light

[Display omitted] •Low temperature solution growth technique SILAR have been used.•CuI, ZnO and ZnO: thin films for solar thermoelectric generator obtained.•Optical properties, structure, surface morphology of these thin films studied.•Composition and thermoelectric properties of these semitransparent films presented.•Output thermoelectric parameters of single thin film thermolegs analyzed. In this work by means studying the crystal structure, optical, electrical, and thermoelectric properties of chip, available and safe for the environment copper iodide CuI, zinc oxide ZnO and indium-doped zinc oxide ZnO:In films we have developed and improved low temperature solution growth Successive Ionic Layer Adsorption and Reaction (SILAR) technique, which allows to deposit these materials over large areas. Output thermoelectric parameters were analyzed for several single p-CuI, n-ZnO and n-ZnO:In thin film thermolegs. The possibility of combining of the obtained p-CuI and n-ZnO:In thin film thermolegs into a thermocouple is shown for the use in new semitransparent planar solar thermoelectric generator working at near-room temperatures through harvesting near-infrared solar light as an energy source to supply electric power to the wireless sensors and microscale devices.