Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

We combine low energy muon spin rotation (LE−μSR) and soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)2Te3. We find that one achieves a full magnetic volume fraction in samples of (V/...

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Veröffentlicht in:Physical review. B 2017-11, Vol.96 (18), Article 184402
Hauptverfasser: Krieger, J. A., Chang, Cui-Zu, Husanu, M.-A., Sostina, D., Ernst, A., Otrokov, M. M., Prokscha, T., Schmitt, T., Suter, A., Vergniory, M. G., Chulkov, E. V., Moodera, J. S., Strocov, V. N., Salman, Z.
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Sprache:eng
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Zusammenfassung:We combine low energy muon spin rotation (LE−μSR) and soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)2Te3. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)x(Bi,Sb)2−xTe3 at doping levels x≳0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V L3 edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.96.184402