Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application

•Pulse-doped nanowires grew vertically on Si without any lateral growth.•We discuss the specific crystal phase in the InAs nanowire.•The subthreshold swing of the doped nanowire channel considerably improved.•The off-state leakage current between the source and gate was considerably decreased. III-V...

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Veröffentlicht in:Journal of crystal growth 2018-10, Vol.500, p.58-62
Hauptverfasser: Gamo, Hironori, Tomioka, Katsuhiro
Format: Artikel
Sprache:eng
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Zusammenfassung:•Pulse-doped nanowires grew vertically on Si without any lateral growth.•We discuss the specific crystal phase in the InAs nanowire.•The subthreshold swing of the doped nanowire channel considerably improved.•The off-state leakage current between the source and gate was considerably decreased. III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole mobility. Here, we report on the integration of vertical InAs nanowire (NW)-channels on Si by selective-area metalorganic vapor phase epitaxy (MOVPE) with a pulse doping technique and demonstration of an InAs NW vertical surrounding-gate transistors. The device had a small subthreshold slope of 68 mV/decade, a normalized transconductance of 0.25 μS/μm, and on/off ratio of around 107. The axial junction with the pulse doping effectively suppressed off-state leakage current resulting in good electrostatic gate control.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.07.035