A self-injection locked DBR laser for laser cooling of beryllium ions

We present a simple, robust, narrow-linewidth, frequency-doubled semiconductor laser source suitable for laser cooling and repumping of 9 Be + ions. A distributed Bragg reflector (DBR) laser diode operating at 626 nm is self-injection-locked to a frequency doubling cavity via phase-stabilised optica...

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Veröffentlicht in:Applied physics. B, Lasers and optics Lasers and optics, 2018-11, Vol.124 (11), Article 214
Hauptverfasser: King, Steven A., Leopold, Tobias, Thekkeppatt, Premjith, Schmidt, Piet O.
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Sprache:eng
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Zusammenfassung:We present a simple, robust, narrow-linewidth, frequency-doubled semiconductor laser source suitable for laser cooling and repumping of 9 Be + ions. A distributed Bragg reflector (DBR) laser diode operating at 626 nm is self-injection-locked to a frequency doubling cavity via phase-stabilised optical feedback when the laser is resonant with the cavity mode. The short-term laser instability is reduced from the MHz level to approximately 20 kHz by the injection process, thus eliminating the need for a high-bandwidth feedback loop to suppress the otherwise troublesome high-frequency laser noise. Long-term stability of the laser frequency is achieved by feeding back to the length of the enhancement cavity utilising an electro-optic frequency comb generator to produce a beatnote with a laser that is detuned by 98 GHz. Long-term injection locking and frequency stabilisation via a wavemeter are ensured using automatic relocking algorithms. This work could find applications throughout the atomic physics community as a cost-effective alternative to expensive, intrinsically narrow-linewidth lasers where cavity-enhanced frequency doubling is required.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-018-7080-0