Band offsets and electronic structures of interface between In0.5Ga0.5As and InP

III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In0.5Ga0.5As/InP interfaces with various interfacial b...

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Veröffentlicht in:	Journal of applied physics 2016-02, Vol.119 (5)
Hauptverfasser:	Cai, Genwang, Wang, Changhong, Wang, Weichao, Liang, Erjun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bonding Conduction bands Density functional theory Indium phosphides Interface stability Mathematical analysis Metal oxides Offsets Valence band
Online-Zugang:	Volltext
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