Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs...

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Veröffentlicht in:Applied physics letters 2016-04, Vol.108 (16)
Hauptverfasser: Wang, Peng, Lin, Shisheng, Ding, Guqiao, Li, Xiaoqiang, Wu, Zhiqian, Zhang, Shengjiao, Xu, Zhijuan, Xu, Sen, Lu, Yanghua, Xu, Wenli, Zheng, Zheyang
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Sprache:eng
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Zusammenfassung:We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4946856