Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within th...

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Veröffentlicht in:Journal of applied physics 2016-06, Vol.119 (24)
Hauptverfasser: Lin, Chun-Cheng, Tang, Jian-Fu, Su, Hsiu-Hsien, Hong, Cheng-Shong, Huang, Chih-Yu, Chu, Sheng-Yuan
Format: Artikel
Sprache:eng
Schlagworte:
Access control
Applied physics
Behavior
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPLIANCE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
Electrochemical impedance spectroscopy
ELECTROCHEMISTRY
EMISSION
IMPEDANCE
Ion diffusion
Ion transport
LITHIUM IONS
MEMORY DEVICES
Random access memory
RANDOMNESS
SPECTROSCOPY
Switching
TRANSMISSION ELECTRON MICROSCOPY
TRANSPORT THEORY
Zinc oxide
ZINC OXIDES
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Zusammenfassung:The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4955063