Improved thermal stability of N-doped Sb materials for high-speed phase change memory application
Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization temperature (∼250 °C), larger crystallization activation energy (3.53 eV), and better data retention ability (166 °C for 10 years). N-doping a...
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Veröffentlicht in: | Applied physics letters 2016-05, Vol.108 (22) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization temperature (∼250 °C), larger crystallization activation energy (3.53 eV), and better data retention ability (166 °C for 10 years). N-doping also broadened the band gap and refined grain size. The reversible resistance transition could be achieved by an electric pulse as short as 8 ns for the PCM cell based on N-doped Sb material. A lower operation power consumption (the energy for RESET operation 2.2 × 10−12 J) was obtained. In addition, N-doped Sb material showed a good endurance of 1.8 × 105 cycles. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4953194 |