Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 ...

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Veröffentlicht in:Applied physics letters 2016-07, Vol.109 (3)
Hauptverfasser: Hirst, L. C., Yakes, M. K., Warner, J. H., Bennett, M. F., Schmieder, K. J., Walters, R. J., Jenkins, P. P.
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Sprache:eng
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Zusammenfassung:Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in Voc with increasing fluence; however, the 80 nm cell showed no degradation in Isc for fluences up to 1014 p+ cm−2. For the same exposure, the Isc of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4959784