Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies

We report photoluminescence (PL) characterization and model simulation of AlInAs/AlGaAs type-II quantum dots (QDs). A thorough and precise determination of the band parameters for QD and matrix materials is given, focusing on the effects of alloy composition and strain state on the electronic proper...

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Veröffentlicht in:	Journal of applied physics 2016-07, Vol.120 (3)
Hauptverfasser:	Saïdi, I., Neffati, R., Ben Radhia, S., Boujdaria, K., Lemaître, A., Bernardot, F., Testelin, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALLOYS ALUMINIUM ARSENIDES Aluminum gallium arsenides Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPARATIVE EVALUATIONS Composition effects Computer simulation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRONS Emission Eutectics FOCUSING GALLIUM ARSENIDES HOLES INDIUM ARSENIDES MATRICES MATRIX MATERIALS OPTICAL PROPERTIES PHOTOLUMINESCENCE Physics QUANTUM DOTS STRAINS SYMMETRY
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Zusammenfassung:	We report photoluminescence (PL) characterization and model simulation of AlInAs/AlGaAs type-II quantum dots (QDs). A thorough and precise determination of the band parameters for QD and matrix materials is given, focusing on the effects of alloy composition and strain state on the electronic properties. Origins of experimentally observed PL emission peaks are identified through a comparison with the band lineup theoretically determined in this work. We interpret the QD emission as originating from indirect type-II transitions involving electrons in the barrier X valley and heavy holes with S and P symmetry.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.4958867