Universal threshold for femtosecond laser ablation with oblique illumination

We quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2016-10, Vol.109 (16)
Hauptverfasser: Liu, Xiao-Long, Cheng, Weibo, Petrarca, Massimo, Polynkin, Pavel
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate the laser fluence transmitted through the air-material interface at the point of ablation threshold. We show that, in spite of the highly nonlinear ionization dynamics involved in the ablation process, the so defined transmitted threshold fluence is universally independent of the angle of incidence and polarization of the laser beam for all three material types. We suggest that angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4965850