Counter-photo-electromotive force at heterointerfaces in MJ SC: Study by spectral method

The influence of p-n junction heating on dependence of the open circuit voltage on the photogenerated current density (V oc -J g ) has been observed and procedure for V oc correction has been suggested. Using this procedure the corrected V oc -J g dependence has been obtained for triple-junction GaInP/GaAs/Ge solar cells. The shape of V oc -J g dependence has been discussed, and it was suggested that it indicates the appearance of a counter EMF of about 10 mV at J g = 100 A/cm 2. It is assumed that this counter EMF is generated on some isotype heterointerface. The spectral method for determining the position of such heterointerface has been considered.