Tuning the Luminescence of Tin Oxide Low Dimensional Structures in the Near Infrared Range by In‐Situ Doping During a Vapor–Solid Growth Process

Tin oxide low dimensional structures increasingly attract attention due to their wide application area. Indeed, by attaining new morphologies and properties the potential applications might increase the device portfolio. Furthermore, an adequate combination of doped SnO2 nano‐ and micro‐structures c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-10, Vol.215 (19), p.n/a
Hauptverfasser: García‐Tecedor, Miguel, del Prado, Félix, Torres, Dorcas, Maestre, David, Cremades, Ana
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Tin oxide low dimensional structures increasingly attract attention due to their wide application area. Indeed, by attaining new morphologies and properties the potential applications might increase the device portfolio. Furthermore, an adequate combination of doped SnO2 nano‐ and micro‐structures could enable multi‐functionality and totally new applications. The latter might be the case of low dimensional tin oxide structures emitting in the near infrared range, which is below the energy of the common visible luminescence of tin oxide. The ability to obtain near infrared luminescence from tin oxide is tested by doping in‐situ during a vapor–solid growth using Li, Cu, and Cr containing precursors in the initial mixture with tin oxide or metallic tin powders. Luminescence around 1.5 eV is obtained for all the samples with morphologies varying from microtubes to rods and belts depending on the specific dopant and the Sn‐based precursor. Doping tin oxide with Li, Cu, and Cr enables the achievement of near infrared luminescence from tin oxide microstructures. In the present work, different doped low dimensional structures are obtained by a vapor–solid method. Luminescence around 1.5 eV is obtained for all the samples with morphologies varying from microtubes to belts depending on the specific dopant and the Sn‐based precursor.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201800179