Stacking Faults in 4H-SiC Single Crystal

Thenitrogen doped and unintentional nitrogen doped 4H-SiC single crystals were grown by PVT method on the C-terminated 4H seeds offcut by 4° from the c-face towards the axis,respectively.Optical microscope was used to investigate the characteristic of stacking fault defects and the effects of nitrogen doped onstacking fault defects in 4H-SiC single crystals etched by molten KOH etching.The result shows that the lines of the basal plane dislocation defect of the 4H-SiC wafer surface are corresponding to stacking fault defects in 4H-SiC single crystals,and the direction of the lines is parallel to .There are more stacking fault defects in 4H-SiC single crystals doped with nitrogen than that of unintentional nitrogen doped 4H-SiC single crystals.This phenomenon is consistent with published literatures in which high concentrations of nitrogen caused the formation of stacking fault defects in 4H-SiC single crystals.However,there is no stacking fault defect in the facet area for nitrogen doped 4H-SiC