Switching Voltage Analysis of Nanoelectromechanical Memory Switches for Monolithic 3-D CMOS-NEM Hybrid Reconfigurable Logic Circuits

The accurate calculation of switching voltage ( {V}_{s} ) is necessary for the reliable and low-power operation of monolithic 3-D (M3D) CMOS-nanoelectromechanical (NEM) hybrid reconfigurable logic circuits because {V}_{s} corresponds to the operating voltage ( {V}_{\text {dd}} ) of NEM memory switches. In this paper, based on the Euler-Bernoulli equation, the physics-based analytical model is proposed to determine {V}_{s} . The accuracy of the proposed model is verified by both the finite-element analysis and experimental results. Our proposed model shows >3% error compared with experimental data. Also, the design guidelines of NEM memory switches are presented in terms of minimum {V}_{s} ( {V}_{s\_{}{m}} ) and device dimensions.