Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Based on an analytical surface potential model incorporating the channel inversion carriers, a physics-based terminal capacitance model with closed-form solutions for a hetero-gate-dielectric (HGD) tunnel field-effect transistor (TFET) is developed for the first time. Good agreements between the proposed model and the numerical simulations have been achieved in all operation regimes and for different HGD structures. The developed model without involving any iterative process can be easily applied to the widely used SPICE simulations and would be helpful for the transient performance of TFET-based circuits.