Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering
We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies...
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Veröffentlicht in: | Applied physics letters 2017-06, Vol.110 (25) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4989802 |