Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. T...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2017-07, Vol.111 (2)
Hauptverfasser:	Krishnamoorthy, Sriram, Xia, Zhanbo, Joishi, Chandan, Zhang, Yuewei, McGlone, Joe, Johnson, Jared, Brenner, Mark, Arehart, Aaron R., Hwang, Jinwoo, Lodha, Saurabh, Rajan, Siddharth
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Doping Electrical measurement Electron gas Electronic devices Field effect transistors Gallium oxides Heterojunction devices Heterostructures Modulation Modulation doping Semiconductor devices Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!