Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. T...

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Veröffentlicht in:Applied physics letters 2017-07, Vol.111 (2)
Hauptverfasser: Krishnamoorthy, Sriram, Xia, Zhanbo, Joishi, Chandan, Zhang, Yuewei, McGlone, Joe, Johnson, Jared, Brenner, Mark, Arehart, Aaron R., Hwang, Jinwoo, Lodha, Saurabh, Rajan, Siddharth
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Doping
Electrical measurement
Electron gas
Electronic devices
Field effect transistors
Gallium oxides
Heterojunction devices
Heterostructures
Modulation
Modulation doping
Semiconductor devices
Transistors
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Zusammenfassung:Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4993569