An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of in situ reflection high-energy electron diffraction. However, establishing a stable oscillation pattern in the growth calibration of complex oxide films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.