Influence of off-stoichiometry on magnetoresistance characteristics of Co2MnSi/Ag-based current-perpendicular-to-plane spin valves

The influence of off-stoichiometry of Co2MnSi (CMS) spin sources on giant magnetoresistance characteristics was investigated for CMS/Ag-based current-perpendicular-to-plane spin valves prepared with various Mn compositions α in Co2Mn α Si0.82 electrodes. The magnetoresistance ratio of the prepared CMS/Co50Fe50 (CoFe) (1.1 nm)/Ag/CoFe (1.1)/CMS spin valves systematically increased with α from 11.4% for Mn-deficient α = 0.62 to 20.7% for Mn-rich α = 1.45 at 290 K. This result suggests that increasing α from a Mn-deficient to Mn-rich value increases the spin polarization by suppressing CoMn antisites harmful to the half-metallicity. Thus, our results demonstrate that appropriately controlling the film composition toward a Mn-rich one is highly effective for enhancing the half-metallicity of CMS in CMS-based spin valves, as it is in CMS-based magnetic tunnel junctions.