Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ∼180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, an...

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Veröffentlicht in:Journal of applied physics 2017-09, Vol.122 (9), p.94304
Hauptverfasser: Zhu, Zhongyunshen, Song, Yuxin, Zhang, Zhenpu, Sun, Hao, Han, Yi, Li, Yaoyao, Zhang, Liyao, Xue, Zhongying, Di, Zengfeng, Wang, Shumin
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Sprache:eng
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Zusammenfassung:We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ∼180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ∼180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.4990602