Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal–Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threadin...
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| Veröffentlicht in: | Applied physics letters 2017-10, Vol.111 (16) |
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| container_title | Applied physics letters |
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| creator | Hsiao, Chih Jen Kakkerla, Ramesh Kumar Chang, Po Chun Lumbantoruan, Franky Juanda Lee, Tsu Ting Lin, Yueh Chin Chang, Shoou Jinn Chang, Edward Yi |
| description | In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal–Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm−2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V−1 s−1 with a carrier concentration of 1.2 × 1017 cm−3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance–voltage (C–V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future. |
| doi_str_mv | 10.1063/1.5008737 |
| format | Article |
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The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm−2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V−1 s−1 with a carrier concentration of 1.2 × 1017 cm−3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance–voltage (C–V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5008737</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum oxide ; Antimony ; Applied physics ; Carrier density ; Carrier mobility ; CMOS ; Dislocation density ; Gallium antimonides ; Heterostructures ; Metalorganic chemical vapor deposition ; Misfit dislocations ; Organic chemicals ; Organic chemistry ; Substrates ; Surface roughness ; Threading dislocations</subject><ispartof>Applied physics letters, 2017-10, Vol.111 (16)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm−2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V−1 s−1 with a carrier concentration of 1.2 × 1017 cm−3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance–voltage (C–V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.</description><subject>Aluminum oxide</subject><subject>Antimony</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>CMOS</subject><subject>Dislocation density</subject><subject>Gallium antimonides</subject><subject>Heterostructures</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Misfit dislocations</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Substrates</subject><subject>Surface roughness</subject><subject>Threading dislocations</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkEtPwkAUhSdGExFd-A9u4kqTwtxOXywJSiUBWfjYNtPplJYAU2amkrr3f1spiXtXNzf58p2cQ8gt0gHSgA1x4FMahSw8Iz2kYegwxOic9CilzAlGPl6SK2PW7eu7jPXId6zVwRbAdxmIgmsurNTlF7el2oHKoShXBexrviltAy-ObSoJMX9NhzEfGyhkSytjdS1srSWkDcwWU1h1zq3KJNSm3K1gsZx8PEKuNGzUASp1kBp4VW1KcUy6Jhc53xh5c7p98j59eps8O_NlPJuM545gbmid1BMofZ96Xh60NZG7iDR1Q98bscyVXDDhjSLBaJS6mRt4zE0zL8dUcsZyITPWJ3edt9JqX0tjk7Wq9a6NTFpVQBkGiC1131Gi7Wa0zJNKl1uumwRp8rtygslp5ZZ96FgjSnvs8j_4U-k_MKmynP0AiA-LgA</recordid><startdate>20171016</startdate><enddate>20171016</enddate><creator>Hsiao, Chih Jen</creator><creator>Kakkerla, Ramesh Kumar</creator><creator>Chang, Po Chun</creator><creator>Lumbantoruan, Franky Juanda</creator><creator>Lee, Tsu Ting</creator><creator>Lin, Yueh Chin</creator><creator>Chang, Shoou Jinn</creator><creator>Chang, Edward Yi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5333-267X</orcidid></search><sort><creationdate>20171016</creationdate><title>Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application</title><author>Hsiao, Chih Jen ; Kakkerla, Ramesh Kumar ; Chang, Po Chun ; Lumbantoruan, Franky Juanda ; Lee, Tsu Ting ; Lin, Yueh Chin ; Chang, Shoou Jinn ; Chang, Edward Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-b4c1e55044f65001a2110b275493d2eac3c498c308b2d26432bd4f1bea33fced3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum oxide</topic><topic>Antimony</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>Carrier mobility</topic><topic>CMOS</topic><topic>Dislocation density</topic><topic>Gallium antimonides</topic><topic>Heterostructures</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Misfit dislocations</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Substrates</topic><topic>Surface roughness</topic><topic>Threading dislocations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsiao, Chih Jen</creatorcontrib><creatorcontrib>Kakkerla, Ramesh Kumar</creatorcontrib><creatorcontrib>Chang, Po Chun</creatorcontrib><creatorcontrib>Lumbantoruan, Franky Juanda</creatorcontrib><creatorcontrib>Lee, Tsu Ting</creatorcontrib><creatorcontrib>Lin, Yueh Chin</creatorcontrib><creatorcontrib>Chang, Shoou Jinn</creatorcontrib><creatorcontrib>Chang, Edward Yi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsiao, Chih Jen</au><au>Kakkerla, Ramesh Kumar</au><au>Chang, Po Chun</au><au>Lumbantoruan, Franky Juanda</au><au>Lee, Tsu Ting</au><au>Lin, Yueh Chin</au><au>Chang, Shoou Jinn</au><au>Chang, Edward Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application</atitle><jtitle>Applied physics letters</jtitle><date>2017-10-16</date><risdate>2017</risdate><volume>111</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal–Organic Chemical Vapor Deposition technique. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum oxide Antimony Applied physics Carrier density Carrier mobility CMOS Dislocation density Gallium antimonides Heterostructures Metalorganic chemical vapor deposition Misfit dislocations Organic chemicals Organic chemistry Substrates Surface roughness Threading dislocations |
| title | Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application |
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