Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal–Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm−2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V−1 s−1 with a carrier concentration of 1.2 × 1017 cm−3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance–voltage (C–V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.