Fractional memristor
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 f...
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Veröffentlicht in: | Applied physics letters 2017-12, Vol.111 (24) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5000919 |