Fractional memristor

Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 f...

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Veröffentlicht in:Applied physics letters 2017-12, Vol.111 (24)
Hauptverfasser: Wang, Frank Z., Shi, Luping, Wu, Huaqiang, Helian, Na, Chua, Leon O.
Format: Artikel
Sprache:eng
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Zusammenfassung:Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5000919