The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films
A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution....
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| Veröffentlicht in: | AIP advances 2018-05, Vol.8 (5), p.055804-055804-5 |
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| container_end_page | 055804-5 |
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| container_issue | 5 |
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| container_title | AIP advances |
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| creator | Fu, H. R. Ma, L. Tian, N. You, C. Y. Wang, K. |
| description | A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t
CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE. |
| doi_str_mv | 10.1063/1.5006335 |
| format | Article |
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CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5006335</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anisotropy ; Annealing ; Bonding ; Electromagnetism ; Hall effect ; Magnesium oxide ; Spin-orbit interactions</subject><ispartof>AIP advances, 2018-05, Vol.8 (5), p.055804-055804-5</ispartof><rights>Author(s)</rights><rights>2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-fad061af1095fd9ab32f3ef1777337e5059eb3c131bfd55d916ed4dda223a033</citedby><cites>FETCH-LOGICAL-c428t-fad061af1095fd9ab32f3ef1777337e5059eb3c131bfd55d916ed4dda223a033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,2096,27901,27902</link.rule.ids></links><search><creatorcontrib>Fu, H. R.</creatorcontrib><creatorcontrib>Ma, L.</creatorcontrib><creatorcontrib>Tian, N.</creatorcontrib><creatorcontrib>You, C. Y.</creatorcontrib><creatorcontrib>Wang, K.</creatorcontrib><title>The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films</title><title>AIP advances</title><description>A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t
CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.</description><subject>Anisotropy</subject><subject>Annealing</subject><subject>Bonding</subject><subject>Electromagnetism</subject><subject>Hall effect</subject><subject>Magnesium oxide</subject><subject>Spin-orbit interactions</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kVFrGzEMx4-xwUrbh30Dw542SGPZ57vc4wjbWmhpYXk3OltOHS72zXYG-fb1ltINCtOLhPjp_5dQ03wAfgW8k0u4Urxmqd40ZwLUaiGF6N7-U79vLnPe8RrtAHzVnjVl80iMwiMGQ3sKhUXHMMQ9TvGQ2TVOEyPnyBQ2HpkPmVLxYcvutvdswiOl2mMzpZmC9eYwYarTPseS4uwNe7DLdRR34Ydf1onlg2XOT_t80bxzOGW6fM7nzebb1836enF7__1m_eV2YVqxKguHlneADvignB1wlMJJctD3vZQ9Ka4GGqUBCaOzStkBOrKttSiERC7leXNzkrURd3pOfo_pqCN6_acR01ZjPcdMpI0cWjVK7gaillBgT9UIAVXfmpWxVevjSWtO8eeBctG7eEihbq8FQMdB9TBU6tOJMinmnMi9uALXv1-kQT-_qLKfT2w2vmDxMbzAv2L6C-rZuv_Br5WfACNpn0Q</recordid><startdate>201805</startdate><enddate>201805</enddate><creator>Fu, H. R.</creator><creator>Ma, L.</creator><creator>Tian, N.</creator><creator>You, C. Y.</creator><creator>Wang, K.</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope></search><sort><creationdate>201805</creationdate><title>The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films</title><author>Fu, H. R. ; Ma, L. ; Tian, N. ; You, C. Y. ; Wang, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-fad061af1095fd9ab32f3ef1777337e5059eb3c131bfd55d916ed4dda223a033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Anisotropy</topic><topic>Annealing</topic><topic>Bonding</topic><topic>Electromagnetism</topic><topic>Hall effect</topic><topic>Magnesium oxide</topic><topic>Spin-orbit interactions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fu, H. R.</creatorcontrib><creatorcontrib>Ma, L.</creatorcontrib><creatorcontrib>Tian, N.</creatorcontrib><creatorcontrib>You, C. Y.</creatorcontrib><creatorcontrib>Wang, K.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fu, H. R.</au><au>Ma, L.</au><au>Tian, N.</au><au>You, C. Y.</au><au>Wang, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films</atitle><jtitle>AIP advances</jtitle><date>2018-05</date><risdate>2018</risdate><volume>8</volume><issue>5</issue><spage>055804</spage><epage>055804-5</epage><pages>055804-055804-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t
CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5006335</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Anisotropy Annealing Bonding Electromagnetism Hall effect Magnesium oxide Spin-orbit interactions |
| title | The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films |
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