The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films

The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films

A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution....

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Veröffentlicht in:AIP advances 2018-05, Vol.8 (5), p.055804-055804-5
Hauptverfasser: Fu, H. R., Ma, L., Tian, N., You, C. Y., Wang, K.
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropy
Annealing
Bonding
Electromagnetism
Hall effect
Magnesium oxide
Spin-orbit interactions
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Zusammenfassung:A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(t CMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5006335