Real-time optical monitoring of semiconductor epitaxial growth

Real-time optical monitoring of semiconductor epitaxial growth

We report on time-resolved Reflectance Anisotropy Spectroscopy (RAS) measurements carried out during the molecular beam epitaxial growth of GaAs (001). Growth started on a c(4x4) reconstructed surface which changed to (2x4) and then to (4x) as growth progressed. We found that reflectance anisotropy...

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Hauptverfasser: Lastras-Martínez, A., Ortega-Gallegos, J., Guevara-Macías, L. E., Ariza-Flores, D., Núñez-Olvera, O., López-Estopier, R. E., Balderas-Navarro, R. E., Lastras-Martínez, L. F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anisotropy
Crystallization
Epitaxial growth
Film thickness
Molecular beams
Monitoring
Reflectance
Reflectance anisotropy spectroscopy
Spectrum analysis
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Beschreibung
Zusammenfassung:We report on time-resolved Reflectance Anisotropy Spectroscopy (RAS) measurements carried out during the molecular beam epitaxial growth of GaAs (001). Growth started on a c(4x4) reconstructed surface which changed to (2x4) and then to (4x) as growth progressed. We found that reflectance anisotropy spectra comprise three components, each one with a specific physical origin and determine their time evolution as a function of epitaxil film thickness. We conclude that RAS is a powerful probe for the monitoring and potentially for the control of epitaxial growth.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5024495