Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure
Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significa...
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| Veröffentlicht in: | Applied physics letters 2018-01, Vol.112 (5) |
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| creator | Zhao, Guijuan Wang, Lianshan Li, Huijie Meng, Yulin Li, Fangzheng Yang, Shaoyan Wang, Zhanguo |
| description | Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current. |
| doi_str_mv | 10.1063/1.4997319 |
| format | Article |
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By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4997319</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Buffer layers ; Current injection ; Electroluminescence ; Emission ; Gallium nitrides ; Indium gallium nitrides ; Light emitting diodes ; Metalorganic chemical vapor deposition ; Optical properties ; Organic chemicals ; Organic chemistry ; Photoluminescence ; Quantum wells ; Sapphire ; Substrates</subject><ispartof>Applied physics letters, 2018-01, Vol.112 (5)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.</description><subject>Applied physics</subject><subject>Buffer layers</subject><subject>Current injection</subject><subject>Electroluminescence</subject><subject>Emission</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Optical properties</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Photoluminescence</subject><subject>Quantum wells</subject><subject>Sapphire</subject><subject>Substrates</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsHv0HAixW2zST79yhFa6HoQT2HbDapKdvNmmQFv72RLXoQPAwzAz_ezHsIXQKZA8nZAuZpVRUMqiM0AVIUCQMoj9GEEMKSvMrgFJ15v4trRhmbIP0c3CDD4ESLRddg2wcj49w72ysXjPLYauzV3iS9bYXD1wAJpTO87lbicRELb51SHW7N9i0kkQvBdFvcGNso7A_i6hydaNF6dXHoU_R6f_eyfEg2T6v18naTSFaxEIUlAVpmtdC5qFXRsLRMSfTDaqWbjFFap2lag2AqVzmVOgMiKlZqKajKiWZTdDXqxv_fB-UD39nBdfEkpwBZCdF3EanZSElnvXdK896ZvXCfHAj_jpEDP8QY2ZuR9dIEEYztfuAP635B3jf6P_iv8hdc1H_R</recordid><startdate>20180129</startdate><enddate>20180129</enddate><creator>Zhao, Guijuan</creator><creator>Wang, Lianshan</creator><creator>Li, Huijie</creator><creator>Meng, Yulin</creator><creator>Li, Fangzheng</creator><creator>Yang, Shaoyan</creator><creator>Wang, Zhanguo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180129</creationdate><title>Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure</title><author>Zhao, Guijuan ; Wang, Lianshan ; Li, Huijie ; Meng, Yulin ; Li, Fangzheng ; Yang, Shaoyan ; Wang, Zhanguo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-22c01285baf6abe7d348409733befd5322b444b1a3e6e62cf510a938fca2e60f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Buffer layers</topic><topic>Current injection</topic><topic>Electroluminescence</topic><topic>Emission</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Optical properties</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Photoluminescence</topic><topic>Quantum wells</topic><topic>Sapphire</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Guijuan</creatorcontrib><creatorcontrib>Wang, Lianshan</creatorcontrib><creatorcontrib>Li, Huijie</creatorcontrib><creatorcontrib>Meng, Yulin</creatorcontrib><creatorcontrib>Li, Fangzheng</creatorcontrib><creatorcontrib>Yang, Shaoyan</creatorcontrib><creatorcontrib>Wang, Zhanguo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Guijuan</au><au>Wang, Lianshan</au><au>Li, Huijie</au><au>Meng, Yulin</au><au>Li, Fangzheng</au><au>Yang, Shaoyan</au><au>Wang, Zhanguo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure</atitle><jtitle>Applied physics letters</jtitle><date>2018-01-29</date><risdate>2018</risdate><volume>112</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4997319</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Buffer layers Current injection Electroluminescence Emission Gallium nitrides Indium gallium nitrides Light emitting diodes Metalorganic chemical vapor deposition Optical properties Organic chemicals Organic chemistry Photoluminescence Quantum wells Sapphire Substrates |
| title | Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure |
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