Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significa...

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Veröffentlicht in:Applied physics letters 2018-01, Vol.112 (5)
Hauptverfasser: Zhao, Guijuan, Wang, Lianshan, Li, Huijie, Meng, Yulin, Li, Fangzheng, Yang, Shaoyan, Wang, Zhanguo
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Sprache:eng
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Zusammenfassung:Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4997319