The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation

A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to th...

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Veröffentlicht in:Moscow University physics bulletin 2018-07, Vol.73 (4), p.398-400
Hauptverfasser: Zhukovskii, V. Ch, Prudskikh, N. S., Golovatyuk, S. E., Krevchik, V. D., Semenov, M. B., Shorokhov, A. V.
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container_issue 4
container_start_page 398
container_title Moscow University physics bulletin
container_volume 73
creator Zhukovskii, V. Ch
Prudskikh, N. S.
Golovatyuk, S. E.
Krevchik, V. D.
Semenov, M. B.
Shorokhov, A. V.
description A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to the negative differential conductivity.
doi_str_mv 10.3103/S0027134918040173
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ispartof Moscow University physics bulletin, 2018-07, Vol.73 (4), p.398-400
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1934-8460
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source SpringerNature Journals
subjects Approximation
Condensed Matter Physics
Drift
Electric contacts
Mathematical analysis
Mathematical and Computational Physics
Physics
Physics and Astronomy
Stability criteria
Superlattices
Theoretical
title The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation
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