The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation

A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to th...

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Veröffentlicht in:Moscow University physics bulletin 2018-07, Vol.73 (4), p.398-400
Hauptverfasser: Zhukovskii, V. Ch, Prudskikh, N. S., Golovatyuk, S. E., Krevchik, V. D., Semenov, M. B., Shorokhov, A. V.
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Sprache:eng
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Zusammenfassung:A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to the negative differential conductivity.
ISSN:0027-1349
1934-8460
DOI:10.3103/S0027134918040173