Effect of dispersion on metal–insulator–metal infrared absorption resonances

Metal–insulator–metal (MIM) resonant absorbers comprise a conducting ground plane, a thin dielectric, and thin separated metal top-surface structures. The dielectric SiO2 strongly absorbs near 9 µm wavelength and has correspondingly strong long-wave-infrared (LWIR) dispersion for the refractive inde...

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Veröffentlicht in:MRS communications 2018-09, Vol.8 (3), p.830-834
Hauptverfasser: Calhoun, Seth R., Lowry, Vanessa C., Stack, Reid, Evans, Rachel N., Brescia, Jonathan R., Fredricksen, Chris J., Nath, Janardan, Peale, Robert E., Smith, Evan M., Cleary, Justin W.
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Sprache:eng
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Zusammenfassung:Metal–insulator–metal (MIM) resonant absorbers comprise a conducting ground plane, a thin dielectric, and thin separated metal top-surface structures. The dielectric SiO2 strongly absorbs near 9 µm wavelength and has correspondingly strong long-wave-infrared (LWIR) dispersion for the refractive index. This dispersion results in multiple absorption resonances spanning the LWIR, which can enhance broad-band sensitivity for LWIR bolometers. Similar considerations apply to silicon nitride Si3N4. TiO2 and AlN have comparatively low dispersion and give simple single LWIR resonances. These dispersion-dependent features for infrared MIM devices are demonstrated by experiment, electrodynamic simulation, and an analytic model based on standing waves.
ISSN:2159-6859
2159-6867
DOI:10.1557/mrc.2018.88