Effect of cerium doping on the crystallization behavior of ZnSb for phase-change memory application

In the paper, the Ce doping is proposed to improve the thermal stability and increase the resistance in ZnSb thin film for phase-change memory (PCM) application. By Ce doping, it is proved that the resistance of amorphous and crystalline state, crystallization temperature ( T c ), 10-year lifetime t...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2018-10, Vol.124 (10), p.1-5, Article 717
Hauptverfasser:	Zou, Hua, Zhai, Liangjun, Hu, Yifeng, Zhang, Jianhao, Zhu, Xiaoqin, Sun, Yuemei, Song, Zhitang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Cerium Characterization and Evaluation of Materials Computer memory Condensed Matter Physics Crystallization Doping Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Performance enhancement Phase change Phase transitions Physics Physics and Astronomy Processes Surfaces and Interfaces Thermal stability Thin Films Zinc antimonides
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Beschreibung
Zusammenfassung:	In the paper, the Ce doping is proposed to improve the thermal stability and increase the resistance in ZnSb thin film for phase-change memory (PCM) application. By Ce doping, it is proved that the resistance of amorphous and crystalline state, crystallization temperature ( T c ), 10-year lifetime temperature ( T ten ) and activation energy ( E a ) were significantly increased in ZnSb films. The improvement of thermal stability and the reduction of reset current were achieved. Through the experimental investigation, the new formation of Ce–Sb bonding by Ce doping was found in the Sb hexagonal structure, which might be the key reasons for the enhanced performance.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-018-2136-x