Synthesis and characterization of graphene-based nanostructures by electron-assisted hot filament plasma CVD

A chemical vapor deposition (CVD) method for the preparation of various graphene-based nanostructures is described. The morphology, microstructure, elemental distribution, and bonding states of the different products obtained during reaction optimization were analyzed by various characterization met...

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Veröffentlicht in:Diamond and related materials 2018-06, Vol.86, p.179-185
Hauptverfasser: Wang, Xuefeng, Li, Hongji, Li, Mingji, Li, Cuiping, Dai, Hongli, Yang, Baohe
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Sprache:eng
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Zusammenfassung:A chemical vapor deposition (CVD) method for the preparation of various graphene-based nanostructures is described. The morphology, microstructure, elemental distribution, and bonding states of the different products obtained during reaction optimization were analyzed by various characterization methods. With a Ni sputtering time of 50 s, growth temperature of 950 °C, pretreatment time of 30 min, and growth time of 10 min, a one-dimensional (1-D) graphene-based nanostructure was successfully grown on a Si substrate. The growth mechanism of the 1-D graphene-based nanostructures was then analyzed experimentally. The obtained 1-D carbon nanostructure was composed of curled or wound graphene sheets, the majority of which exhibit carbon nanotube-like hollow structures and characteristics similar to graphene nanoribbons. This 1-D carbon nanostructure can find potential applications in the development of sensors, capacitors, and catalysts, mainly due to its high aspect ratio, large surface area, and favorable characteristics. A novel one-dimensional graphene-based nanostructure was prepared on a Si substrate via a CVD method based on an SLS/VSS growth mechanism. [Display omitted] •A novel one-dimensional (1-D) graphene nanostructure was prepared via a CVD method.•Si-Ni alloy droplets are the key to nucleation and to formation of the 1-D morphology.•The growth mechanism of the 1-D graphene-based nanostructure is discussed.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2018.05.002