Fabrication of buried microfluidic channels with observation windows using femtosecond laser photoablation and parylene-C coating

We developed an advanced method for fabricating microfluidic structures comprising channels and inputs/outputs buried within a silicon wafer based on single level lithography. We etched trenches into a silicon substrate, covered these trenches with parylene-C, and selectively opened their bottoms us...

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Veröffentlicht in:Microfluidics and nanofluidics 2018-09, Vol.22 (9), p.1-7, Article 105
Hauptverfasser: Gablech, Imrich, Somer, Jakub, Fohlerová, Zdenka, Svatoš, Vojtěch, Pekárek, Jan, Kurdík, Stanislav, Feng, Jianguo, Fecko, Peter, Podešva, Pavel, Hubálek, Jaromír, Neužil, Pavel
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Sprache:eng
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Zusammenfassung:We developed an advanced method for fabricating microfluidic structures comprising channels and inputs/outputs buried within a silicon wafer based on single level lithography. We etched trenches into a silicon substrate, covered these trenches with parylene-C, and selectively opened their bottoms using femtosecond laser photoablation, forming channels and inputs/outputs by isotropic etching of silicon by xenon difluoride vapors. We subsequently sealed the channels with a second parylene-C layer. Unlike in previously published works, this entire process is conducted at ambient temperature to allow for integration with complementary metal oxide semiconductor devices for smart readout electronics. We also demonstrated a method of chip cryo-cleaving with parylene presence that allows for monitoring of the process development. We also created an observation window for in situ visualization inside the opaque silicon substrate by forming a hole in the parylene layer at the silicon backside and with local silicon removal by xenon difluoride vapor etching. We verified the microfluidic chip performance by forming a segmented flow of a fluorescein solution in an oil stream. This proposed technique provides opportunities for forming simple microfluidic systems with buried channels at ambient temperature.
ISSN:1613-4982
1613-4990
DOI:10.1007/s10404-018-2125-6