Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped I...

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Veröffentlicht in:	Technical physics letters 2018-07, Vol.44 (7), p.612-614
Hauptverfasser:	Petrushkov, M. O., Putyato, M. A., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Esin, M. Yu, Gavrilova, T. A., Vasev, A. V., Preobrazhenskii, V. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge distribution Classical and Continuum Physics Current carriers Diffusion Morphology P-n junctions Physics Physics and Astronomy Scanning electron microscopy Zinc
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785018070258