Preparation and characterization of Sb2Se3 devices for memory applications

Preparation and characterization of Sb2Se3 devices for memory applications

In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET...

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Hauptverfasser: N., Shylashree, V., Uma B., S., Dhanush, Abachi, Sagar, A., Nisarga, K., Aashith, G., Sangeetha B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Antimony compounds
Memory devices
Phase change materials
Selenides
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Beschreibung
Zusammenfassung:In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET and RESET state is shown by the I-V characterization. The change of phase was studied using R-V characterization. Different fundamental modes were also identified using Raman spectroscopy.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5038711