2 step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices

We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a q...

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Veröffentlicht in:	Applied physics letters 2018-06, Vol.112 (24)
Hauptverfasser:	Zhang, Shuai, Pan, Xing-Chen, Li, Zhaoguo, Xie, Faji, Qin, Yuyuan, Cao, Lu, Wang, Xuefeng, Wang, Xinran, Miao, Feng, Song, Fengqi, Wang, Baigeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Dependence Magnetic fields Resistance Symmetry Topological insulators Transport Variation
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Zusammenfassung:	We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.5031013