Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors

This work analyses the physics of active trap states impacted by hydrogen (H) and nitrogen (N) dopings in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and investigates their effects on the device performances under back-gate biasing. Based on numerical simulation and interpretation of...

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Veröffentlicht in:	Applied physics letters 2018-06, Vol.112 (25)
Hauptverfasser:	Li, Guoli, Abliz, Ablat, Xu, Lei, André, Nicolas, Liu, Xingqiang, Zeng, Yun, Flandre, Denis, Liao, Lei
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer simulation Defects Dopants Doping Indium gallium zinc oxide Nitrogen Plasmas (physics) Semiconductor devices Slope stability Thin film transistors Transistors
Online-Zugang:	Volltext
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